Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer

ABSTRACT

A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The VCSEL further includes first and second mirrors that are separated by an optical path of at least one wavelength. Furthermore, the oxide insulating region beneficially has a optical path of less than ¼ wavelength. The ion implanted spatial region is beneficially concentrically aligned with the oxide insulating region.

UNITED STATES GOVERNMENT RIGHTS

The United States Government has acquired certain rights in thisinvention through Government Contract No. 70NANB5H1114 awarded by NISTATP.

CROSS-REFERENCE TO RELATED APPLICATIONS

Not applicable.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to the field of vertical cavitysurface emitting lasers. More specifically, it relates to currentconfinement structures used in vertical cavity surface emitting lasers.

2. Discussion of the Related Art

Vertical cavity surface emitting lasers (VCSELs) represent a relativelynew class of semiconductor lasers. While there are many variations ofVCSELs, one common characteristic is that they emit light perpendicularto a wafer's surface. Advantageously, VCSELs can be formed from a widerange of material systems to produce specific characteristics.

VCSELs include semiconductor active regions, which can be fabricatedfrom a number of material systems, distributed Bragg reflector (DBR)mirrors, current confinement structures, substrates, and contacts.Because of their complicated structure, and because of their materialrequirements, VCSELs are usually grown using metal-organic chemicalvapor deposition (MOCVD) or by molecular beam epitaxy (MBE).

FIG. 1 illustrates a typical VCSEL 10. As shown, an n-doped galliumarsenide (GaAS) substrate 12 has an n-type electrical contact 14. Ann-doped lower mirror stack 16 (a DBR) is on the GaAS substrate 12, andan n-type graded-index lower spacer 18 is disposed over the lower mirrorstack 16. An active region 20, usually having a number of quantum wells,is formed over the lower spacer 18. A p-type graded-index top spacer 22is disposed over the active region 20, and a p-type top mirror stack 24(another DBR) is disposed over the top spacer 22. Over the top mirrorstack 24 is a p-type conduction layer 9, a p-type cap layer 8, and ap-type electrical contact 26.

Still referring to FIG. 1, the lower spacer 18 and the top spacer 22separate the lower mirror stack 16 from the top mirror stack 24 suchthat an optical cavity is formed. As the optical cavity is resonant atspecific wavelengths, the mirror separation is controlled to resonant ata predetermined wavelength (or at a multiple thereof). At least part ofthe top mirror stack 24 includes an insulating region 40 that providescurrent confinement. The insulating region 40 is usually formed eitherby implanting protons into the top mirror stack 24 or by forming anoxide layer. The insulating region 40 defines a conductive annularcentral opening 42 that forms an electrically conductive path though theinsulating region 40.

In operation, an external bias causes an electrical current 21 to flowfrom the p-type electrical contact 26 toward the n-type electricalcontact 14. The insulating region 40 and the conductive central opening42 confine the current 21 such that the current flows through theconductive central opening 42 and into the active region 20. Some of theelectrons in the current 21 are converted into photons in the activeregion 20. Those photons bounce back and forth (resonate) between thelower mirror stack 16 and the top mirror stack 24. While the lowermirror stack 16 and the top mirror stack 24 are very good reflectors,some of the photons leak out as light 23 that travels along an opticalpath. Still referring to FIG. 1, the light 23 passes through the p-typeconduction layer 9, through the p-type cap layer 8, through an aperture30 in the p-type electrical contact 26, and out of the surface of thevertical cavity surface emitting laser 10.

It should be understood that FIG. 1 illustrates a typical VCSEL, andthat numerous variations are possible. For example, the dopings can bechanged (say, by providing a p-type substrate 12), different materialsystems can be used, operational details can be tuned for maximumperformance, and additional structures, such as tunnel junctions, can beadded.

While generally successful, VCSELs have problems. For example, in someapplications it is important for a VCSEL to emit light in thefundamental mode. That is, light with a single unimodal spatial mode(from only one area of the VCSEL) and with a single spectral content.However, prior art insulating regions 40 are less than optimal inproducing single mode light. To understand why this is so, theinsulation region 40 needs to be understood in more detail.

As noted, the insulating region 40 and the central opening 42 act as acurrent guide into the active region. Also as noted, the insulatingregion is usually produced either by implanting protons or by forming anoxide layer. Proton implantation is described by Y. H. Lee et al.,Electr. Lett., Vol. 26, No. 11, pp. 710-711 (1990) and by T. E. Sale,Vertical Cavity Surface Emitting Lasers, Research Press Ltd., pp.117-127 (1995), both of which are incorporated by reference. Oxidelayers are taught by D. L. Huffaker et al., Appl Phys. Lett., Vol. 65,No. 1, pp. 97-99 (1994) and by K. D. Choquette et al., Electr. Lett.,Vol. 30, No. 24, pp. 2043-2044 (1994), both of which are incorporated byreference.

Ion-implanted VCSELs are typically fabricated using a single energyproton implant in the shape of an annular ring to define a currentaperture (multiple implant energies are used to electrically isolate theentire VCSEL). That proton implantation creates structural defects thatproduce a relatively high resistance annular structure having aconductive core. While the high resistance annular structure effectivelysteers current through its conductive core and into the active region,ion implantation does not produce significant optical guiding. Theresult is that ion implantation is effective at steering current intothe active region, but ineffective at limiting the optical modes of thelaser. Thus, prior art ion implanted VCSELS tended to operate withmultiple lasing modes.

In contrast, VCSELs that use oxide current confinement regions benefitfrom the oxide layer's optical index of refraction, which is about halfthat before oxidation. This forms an optical guide that tends to providetransverse mode optical confinement. However, because of the distributednature of the series resistance, oxide VCSELs have the highest P-Njunction current density and the highest optical gain at the edge of thecavity. This current distribution encourages the formation of higherorder spatial modes, particularly at large bias currents. While thetransverse mode optical confinement suppresses undesirable higher orderoptical modes, in the prior art to obtain single fundamental modeoperation an oxide optical current confinement region had to have such asmall aperture that light from the VCSEL was severally reduced.

Oxide VCSELs (those that use oxide current confinement) typicallyinclude an AlGaAs layer with a high aluminum content (97-98%). Such ahigh aluminum content structure tends to oxidize much more rapidly thanthe material layers used to form the rest of the P-type DBR mirror(which is typically 85% Al and 15% Ga). To fabricate the oxide currentconfinement, reactive ion etching is used to form trenches to the edgeof a high Al content layer. Oxidation then forms about a 10 micron deepoxide structure in the high Al content layer, while forming less then a1 micron deep oxide structure in the adjacent layers. The high Alcontent layer oxidizes with a complex aluminum oxide that is not only anelectrical insulator, but also which occupies about the same space asthe layer before oxidation.

Because oxide VCSELs and ion-implanted VCSELs have differentcharacteristics, VCSEL designers have had to chose from among competingfeatures, high output power with higher order spectral modes (oxideVCSELs), or lower output power but with fewer spatial modes (ionimplanted VCSEL). Therefore, a new technique of forming VCSELs with thebenefits of both ion implanted VCSELs and oxide VCSELs would bebeneficial.

SUMMARY OF THE INVENTION

The following summary of the invention is provided to facilitate anunderstanding of some of the innovative features unique to the presentinvention, and is not intended to be a full description. A fullappreciation of the various aspects of the invention can be gained bytaking the entire specification, claims, drawings, and abstract as awhole.

Accordingly, the principles of the present invention are directed to anew VCSEL that possess benefits of both ion implanted and oxide VCSELs.According to the principles of the present invention, an oxide structureand an interior gain guide ion implant structure are combined to form aVCSEL. The combination of the oxide layer and an interior ion implantgain guide can achieve desirable low order optical modes with lowthreshold and high efficiency. To support fewer optical modes the oxidelayer is formed more than two mirror periods from the active region.Beneficially, the oxide layer has an optical thickness less than ¼wavelength.

The novel features of the present invention will become apparent tothose of skill in the art upon examination of the following detaileddescription of the invention or can be learned by practice of thepresent invention. It should be understood, however, that the detaileddescription of the invention and the specific examples presented, whileindicating certain embodiments of the present invention, are providedfor illustration purposes only because various changes and modificationswithin the spirit and scope of the invention will become apparent tothose of skill in the art from the detailed description of the inventionand claims that follow.

BRIEF DESCRIPTION OF THE DRAWING

The accompanying figures, in which like reference numerals refer toidentical or functionally-similar elements throughout the separate viewsand which are incorporated in and form part of the specification,further illustrate the present invention and, together with the detaileddescription of the invention, serve to explain the principles of thepresent invention.

In the drawings:

FIG. 1 illustrates a typical vertical cavity surface emitting laser; and

FIG. 2 illustrates a vertical cavity surface emitting laser according tothe principles of the present invention.

Note that in the drawings that like numbers designate like elements.Additionally, for explanatory convenience the descriptions usedirectional signals such as up and down, top and bottom, and lower andupper. Such signals, which are derived from the relative positions ofthe elements illustrated in the drawings, are meant to aid theunderstanding of the present invention, not to limit it.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

The principles of the present invention provide for a VCSEL that uses acurrent confinement structure comprised of an oxide structure and aninterior gain guide ion implant structure. An example of such a VCSEL isthe VCSEL 100 illustrated in FIG. 2. FIG. 2 should be understood as a“cut-away” schematic depiction of layers of a VCSEL that is generallyconfigured as shown in FIG. 1. Thus, the same element numbers will beused for similar elements in FIG. 2 that were used in FIG 1.

Although for clarity our description of the illustrated embodimentassumes a VCSEL with mirrors and active region based on the AlGaAsmaterial system, the invention broadly applies to VCSELs using anycommensurate material system, such as AlGaAs mirrors and AlGaInP/GaAsactive region for 670 nm, or AlGaInAs/InP mirrors and AlGaInAs activeregion for 1550 nm.

As shown in FIG. 2, the VCSEL 100 includes an n-doped gallium arsenide(GaAS) substrate 12 having an n-type electrical contact 14. An n-dopedlower mirror stack 16 (a DBR) is on the GaAS substrate 12, and an n-typegraded-index lower spacer 18 is disposed over the lower mirror stack 16.

An active region 20 having P-N junction structures and a number ofquantum wells is formed over the lower spacer 18. The composition of theactive region 20 is beneficially AlGaAs, with the specific aluminumconcentration varying in the layers that form the active region 20. Forexample, one layer may have between twenty and thirty percent ofaluminum, while an adjacent layer might have between zero and fivepercent of aluminum. There could be more or fewer alternating layers,depending on how the quantum wells are to be arranged in the activeregion 20. Over the active region 20 is a p-type graded-index top spacer22. A p-type top mirror stack 24 (another DBR) is disposed over the topspacer 22. Over the top mirror stack 24 is a p-type conduction layer 9,a p-type GaAs cap layer 8, and a p-type electrical contact 26. As in theVCSEL 10 (see FIG. 1), the lower spacer 18 and the top spacer 22separate the lower mirror stack 16 from the top mirror stack 24 suchthat an optical cavity that is resonant at a specific wavelength isformed. More about this subsequently.

Still referring to FIG. 2, the top mirror stack 24, and part of the topspacer 22, includes an oxide insulating region 140. That oxideinsulating region is produced by forming the top mirror stack 24 with anAlGaAs layer having a high aluminum content (97-98%), and then oxidizingthat high aluminum content layer along an annular ring. Oxidation thenproduces the oxide insulating region 140. Then, a spatial region 180 isimplanted with ions 160. The implanted ions form a high resistanceregion within the annular ring formed by the oxide layer 140. Theimplanted spatial region 180 should be in close proximity to the oxideinsulating region 140. For example, the spatial region 180 may bepositioned coincident with, somewhat above, or somewhat below the region140. This enables optimization of the electrical and optical propertiesfor a specific application.

In operation, an external bias causes an electrical current 121 to flowfrom the p-type electrical contact 26 toward the n-type electricalcontact 14. The oxide insulating region 140 and the ion implantedspatial region 180 guide the current 121 through a conductive centralopening such that the current 121 flows into the active region 20. Someof the electrons in the current 121 are converted into photons in theactive region 20. Those photons bounce back and forth (resonate) betweenthe lower mirror stack 16 and the top mirror stack 24. While the lowermirror stack 16 and the top mirror stack 24 are very good reflectors,some of the photons leak out as light 23 that travels along an opticalpath. Still referring to FIG. 2, the light 23 passes through the p-typeconduction layer 9, through the p-type GaAs cap layer 8, through anaperture 30 in the p-type electrical contact 26, and out of the surfaceof the vertical cavity surface emitting laser 100.

Several features of the VCSEL 100 should be highlighted. First, thelower spacer 18 and the top spacer 22 separate the lower mirror stack 16from the top mirror stack 24 by at least one wavelength in optical pathof the light 23. Furthermore, the oxide layer 140 beneficially has anoptical path of less than ¼ wavelength. Both of those features reducethe effective index difference, which provides small optical modeconfinement, and which tends to suppress higher order optical modes.Also, as shown in FIG. 2, the oxide layer 140 is more than two mirrorperiods from the active region. Additionally, the ion implanted spatialregion 180 is beneficially concentrically aligned with the oxideinsulating region 140. The ion implanted spatial region 180 and theoxide insulating region 140 then jointly act to confine electricalcurrent 121 within a small aperture region. Furthermore, the oxideinsulating region 140 acts to confine the lasing light along a definedoptical path. Thus, optical gain is preferentially given to opticalmodes having a large fraction of intensity in the small aperture region,and the fundamental mode always satisfies that criterion. Thus, singlemode (fundamental) operation can be achieved.

The oxide insulating region 140 is beneficially introduced at the properlocation and thickness to achieve the best optical results, while theenergy and dose of the implanted ions 60 can be controlled to tailor thelateral sheet resistance. Proper VCSEL design enables achievement of alow order optical mode structure with low threshold and high efficiency.

The embodiments and examples set forth herein are presented to bestexplain the present invention and its practical application and tothereby enable those skilled in the art to make and utilize theinvention. Those skilled in the art, however, will recognize that theforegoing description and examples have been presented for the purposeof illustration and example only. Other variations and modifications ofthe present invention will be apparent to those of skill in the art, andit is the intent of the appended claims that such variations andmodifications be covered. The description as set forth is not intendedto be exhaustive or to limit the scope of the invention. Manymodifications and variations are possible in light of the above teachingwithout departing from the spirit and scope of the following claims. Itis contemplated that the use of the present invention can involvecomponents having different characteristics. It is intended that thescope of the present invention be defined by the claims appended hereto,giving full cognizance to equivalents in all respects.

1. A vertical cavity surface emitting laser for emitting light having awavelength, comprising: a substrate; an active region adjacent saidsubstrate; a first mirror between said active region and said substrate;and a second minor adjacent said active region, said active region beingbetween said second mirror and said first mirror; and an ion implantedspatial region that extends into said active region; wherein said secondmirror includes an oxide insulating region; and wherein said firstmirror and said second mirror are separated by an optical path length orleast one wavelength.
 2. The vertical cavity surface emitting laser ofclaim 1, wherein said active region has at least one quantum well. 3.The vertical cavity surface emitting laser of claim 1, wherein saidoxide insulating region and said ion implanted spatial region confinecurrent flow through a center of said ion implanted spatial region. 4.The vertical cavity surface emitting laser of claim 1, wherein said ionimplanted spatial region is concentrically aligned with said oxideinsulating region.
 5. The vertical cavity surface emitting laser ofclaim 1, wherein said oxide insulating region has an optical path lengthof less than ¼ wavelength.
 6. A vertical cavity surface emitting laserfor emitting light having a wavelength, comprising; a substrate; anactive region adjacent said substrate; a first minor between said activeregion and said substrate; and a second mirror adjacent said activeregion, said active region being between said second mirror and saidfirst mirror, said second mirror including a high aluminum content layerhaving an aluminum concentration sufficient for oxidizing the secondmirror; and an ion implanted spatial region that extends into saidactive region; wherein said aluminum content layer is oxidized into anoxide insulating region; and wherein said first mirror and said secondmirror are separated by an optical path of at least one wavelength. 7.The vertical cavity surface emitting laser of claim 6, further includinga first spacer between said first mirror and said active region, and asecond spacer between said active region and said second mirror.
 8. Thevertical cavity surface emitting laser of claim 7, wherein said oxideinsulating region extends into said second spacer.
 9. The verticalcavity surface emitting laser of claim 6, wherein said substrate isdoped with an n-type dopant.
 10. The vertical cavity surface emittinglaser of claim 6, wherein said active region has at least one quantumwell.
 11. The vertical cavity surface emitting laser of claim 6, whereinsaid oxide insulating region and said ion implanted spatial regionconfine current flow through a center of said ion implanted spatialregion.
 12. The vertical cavity surface emitting laser of claim 6,wherein said ion implanted spatial region is concentrically aligned withsaid oxide insulating region.
 13. The vertical cavity surface emittinglaser of claim 6, wherein said oxide insulating region has an opticalpath length of less than ¼ wavelength.